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TMS28F800AEYB10BDBJQ

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TMS28F800AEYB10BDBJQ

Flash, 1MX8, 100ns, PDSO44

Manufacturer: Texas Instruments

Categories: Flash Memories

Quality Control: Learn More

The Texas Instruments TMS28F800AEYB10BDBJQ is a 8 Mbit NOR Flash memory device with a 1M x 8 memory organization. Featuring asynchronous operation, this component offers a maximum access time of 100ns and a minimum programming voltage of 5V. The TMS28F800 series memory is housed in a 44-lead PDSO package (JESD-30 Code R-PDSO-G44) with a 1.27mm terminal pitch, designed for surface mounting. It includes a bottom boot block for flexible firmware storage. Operating over a temperature range of -40°C to 125°C, this CMOS technology-based memory is suitable for applications in industrial automation, automotive systems, and telecommunications. The device supports a supply voltage range of 4.5V to 5.5V and has a maximum supply current of 30mA.

Additional Information

Series: TMS28F800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TypeNOR TYPE
Width13.3000
TechnologyCMOS
Length28.2000
Access_Time_Max100.0000000000000000
Additional_FeatureBOTTOM BOOT BLOCK
Boot_BlockBottom
JESD_30_CodeR-PDSO-G44
Memory_Density8388608.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization1MX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOP
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Parallel_SerialParallel
Programming_Voltage5
Seated_Height_Max2.6250
Supply_Current_Max30.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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