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TMS28F512A-12C4FME4

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TMS28F512A-12C4FME4

Flash, 64KX8, 120ns, PQCC32

Manufacturer: Texas Instruments

Categories: Flash Memories

Quality Control: Learn More

Texas Instruments TMS28F512 series NOR Flash memory, part number TMS28F512A-12C4FME4, offers a memory density of 524288 bits organized as 64K words by 8 bits. This component features a maximum access time of 120ns and operates from a 4.5V to 5.5V supply voltage range. The memory supports asynchronous operation and is housed in a 32-terminal PQCC (Plastic Leaded Chip Carrier) package with J-bend terminals. With a typical endurance of 10,000 write/erase cycles, it is suitable for applications requiring persistent data storage. This device finds application in industrial automation, consumer electronics, and telecommunications sectors. The component utilizes CMOS technology and is designed for surface mounting.

Additional Information

Series: TMS28F512RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TypeNOR TYPE
Width11.4300
TechnologyCMOS
Length13.9700
Access_Time_Max120.0000000000000000
Command_User_InterfaceYes
Data_PollingNo
Endurance10000.000000000000000
JESD_30_CodeR-PQCC-J32
Memory_Density524288.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization64KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals32
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_Equivalence_CodeLDCC32,.5X.6
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Parallel_SerialParallel
Programming_Voltage12
Seated_Height_Max3.5600
Standby_Current_Max0.000100000000000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD
Toggle_BitNo

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