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TMS28F512-10C3NL4

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TMS28F512-10C3NL4

Flash, 64KX8, 100ns, PDIP32

Manufacturer: Texas Instruments

Categories: Flash Memories

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The Texas Instruments TMS28F512-10C3NL4, a 64K x 8 Flash memory device, offers a 100ns access time. This NOR Flash memory operates asynchronously with a CMOS technology and features a BULK ERASE capability. Designed for parallel interface, it provides a memory density of 524,288 bits and a command user interface. The device is housed in a 32-pin PDIP package with through-hole termination and a 2.54mm terminal pitch. Operating within a temperature range of 0°C to 70°C, it supports a supply voltage of 4.5V to 5.5V, with a nominal 5V. Applications include industrial control systems and data logging. The TMS28F512 series is known for its endurance of 1000 erase/write cycles.

Additional Information

Series: TMS28F512RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length41.4000
TypeNOR TYPE
Width15.2400
TechnologyCMOS
Access_Time_Max100.0000000000000000
Additional_FeatureBULK ERASE
Command_User_InterfaceYes
Data_PollingNo
Endurance1000.000000000000000
JESD_30_CodeR-PDIP-T32
Memory_Density524288.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization64KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals32
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_Equivalence_CodeDIP32,.6
Package_ShapeRectangular
Package_StyleIN-LINE
Parallel_SerialParallel
Programming_Voltage12
Seated_Height_Max5.0800
Standby_Current_Max0.000100000000000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual
Toggle_BitNo

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