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TMS28F210-17C3FNE4

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TMS28F210-17C3FNE4

Flash, 64KX16, 170ns, PQCC44

Manufacturer: Texas Instruments

Categories: Flash Memories

Quality Control: Learn More

The Texas Instruments TMS28F210-17C3FNE4 is a 1 Mbit NOR Flash memory device organized as 64K words by 16 bits. This component offers a maximum access time of 170ns and operates from a 4.5V to 5.5V supply voltage. It features a BULK ERASE additional function and supports a user command interface. The TMS28F210-17C3FNE4 is housed in a 44-lead J-leaded ceramic chip carrier (PQCC44) package, suitable for surface-mount applications. With an endurance rating of 1000 program/erase cycles, this memory is engineered for use in industrial and automotive applications requiring reliable non-volatile storage. The device operates within a temperature range of -40°C to 85°C.

Additional Information

Series: TMS28F210RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length16.5862
TypeNOR TYPE
Width16.5862
TechnologyMOS
Access_Time_Max170.0000000000000000
Additional_FeatureBULK ERASE
Command_User_InterfaceYes
Data_PollingNo
Endurance1000.000000000000000
JESD_30_CodeS-PQCC-J44
Memory_Density1048576.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization64KX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals44
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_Equivalence_CodeLDCC44,.7SQ
Package_ShapeSquare
Package_StyleCHIP CARRIER
Parallel_SerialParallel
Programming_Voltage12
Seated_Height_Max4.5700
Standby_Current_Max0.000100000000000
Supply_Current_Max50.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD
Toggle_BitNo

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