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TMS28F010-15C3NE

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TMS28F010-15C3NE

Flash, 128KX8, 150ns, PDIP32

Manufacturer: Texas Instruments

Categories: Flash Memories

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Texas Instruments TMS28F010-15C3NE is a 1-Mbit NOR Flash memory device organized as 128K words by 8 bits. This component features a 150ns access time and operates asynchronously with a 5V supply. The memory density is 1048576 bits, with 131072 words. It supports a BULK ERASE function and utilizes a user-configurable command interface. Designed for robust operation, it offers an endurance rating of 1000 program/erase cycles. The TMS28F010-15C3NE is housed in a 32-lead PDIP package (JESD_30 Code: R-PDIP-T32) with through-hole termination and a 2.54mm terminal pitch. It operates within a temperature range of -40°C to 85°C. Applications for this Texas Instruments Flash memory include industrial control, telecommunications, and automotive systems.

Additional Information

Series: TMS28F010RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TypeNOR TYPE
Width15.2400
TechnologyCMOS
Length41.4000
Access_Time_Max150.0000000000000000
Additional_FeatureBULK ERASE
Command_User_InterfaceYes
Data_PollingNo
Endurance1000.000000000000000
JESD_30_CodeR-PDIP-T32
Memory_Density1048576.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization128KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals32
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_Equivalence_CodeDIP32,.6
Package_ShapeRectangular
Package_StyleIN-LINE
Parallel_SerialParallel
Programming_Voltage12
Seated_Height_Max5.0800
Standby_Current_Max0.000100000000000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual
Toggle_BitNo

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