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TMS28F010-10C2NQ

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TMS28F010-10C2NQ

Flash, 128KX8, 100ns, PDIP32

Manufacturer: Texas Instruments

Categories: Flash Memories

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The Texas Instruments TMS28F010-10C2NQ is a 1-Mbit NOR Flash memory device organized as 128K words by 8 bits. This component offers a maximum access time of 100 ns and operates asynchronously. It features a BULK ERASE capability and a user command interface. The TMS28F010 series utilizes CMOS technology and operates within a temperature range of -40°C to 125°C. It is housed in a 32-lead Plastic Dual In-line Package (PDIP) with through-hole mounting. Typical applications include industrial control systems, automotive electronics, and data storage within embedded systems. The memory density is 1048576 bits. The supply voltage range is 4.5V to 5.5V, with a nominal voltage of 5V. Standby current is specified at a maximum of 0.1 mA, and maximum supply current is 30 mA.

Additional Information

Series: TMS28F010RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length41.4000
TypeNOR TYPE
Width15.2400
TechnologyCMOS
Access_Time_Max100.0000000000000000
Additional_FeatureBULK ERASE
Command_User_InterfaceYes
Data_PollingNo
Endurance100.000000000000000
JESD_30_CodeR-PDIP-T32
Memory_Density1048576.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization128KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals32
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_Equivalence_CodeDIP32,.6
Package_ShapeRectangular
Package_StyleIN-LINE
Parallel_SerialParallel
Programming_Voltage12
Seated_Height_Max5.0800
Standby_Current_Max0.000100000000000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual
Toggle_BitNo

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