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TMS28F008AEB70BDCDQ

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TMS28F008AEB70BDCDQ

Flash, 1MX8, 100ns, PDSO40

Manufacturer: Texas Instruments

Categories: Flash Memories

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The Texas Instruments TMS28F008AEB70BDCDQ is a 1-Megabit (1M) x 8 NOR Flash memory device offering 100ns access time. This component, from the TMS28F008 series, features a 1MX8 memory organization and operates asynchronously. It supports 10,000 Program/Erase cycles and includes a bottom boot block for flexible firmware storage. The device is housed in a 40-terminal, R-PDSO-G40 (TSOP) package with a 1.27mm pitch, suitable for surface mounting. Operating within a supply voltage range of 2.7V to 3.6V and a temperature range of -40°C to 125°C, it is designed for demanding applications in industrial automation, telecommunications, and consumer electronics. The memory density is 8,388,608 bits.

Additional Information

Series: TMS28F008RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TypeNOR TYPE
Width10.0000
TechnologyCMOS
Length18.4000
Access_Time_Max100.0000000000000000
Additional_Feature10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK
Boot_BlockBottom
JESD_30_CodeR-PDSO-G40
Memory_Density8388608.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization1MX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals40
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Parallel_SerialParallel
Programming_Voltage3
Seated_Height_Max1.2000
Supply_Voltage_Max3.60000
Supply_Voltage_Min2.70000
Supply_Voltage_Nom3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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