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TMS28F004ASB60CDBJE

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TMS28F004ASB60CDBJE

Flash, 512KX8, 60ns, PDSO44

Manufacturer: Texas Instruments

Categories: Flash Memories

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Texas Instruments TMS28F004 series NOR Flash memory, part number TMS28F004ASB60CDBJE. This device offers a memory organization of 512K words by 8 bits, providing a total density of 4Mbit (4194304 bits). Featuring a fast asynchronous access time of 60ns, it supports user-selectable programming voltages (VPP) of either 5V or 12V. The component operates with a supply voltage range of 3.0V to 5.5V and is specified for operation across an industrial temperature range from -40°C to +85°C. The TMS28F004ASB60CDBJE is housed in a 44-lead plastic small outline package (PDSO44) with a terminal pitch of 1.27mm. This memory solution is suitable for applications in industrial control, telecommunications, and automotive systems.

Additional Information

Series: TMS28F004RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length28.2000
TypeNOR TYPE
Width13.3000
TechnologyMOS
Access_Time_Max60.0000000000000000
Additional_FeatureUSER-SELECTABLE 5V OR 12 V VPP
Boot_BlockBottom
JESD_30_CodeR-PDSO-G44
Memory_Density4194304.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization512KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals44
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOP
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Parallel_SerialParallel
Programming_Voltage5
Seated_Height_Max2.6300
Supply_Voltage_Max5.50000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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