CSD75301W1015
MOSFET 2P-CH 20V 1.2A 6DSBGAManufacturer: Texas Instruments
Categories: FET, MOSFET Arrays
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The Texas Instruments NexFET™ CSD75301W1015 is a dual P-channel MOSFET array with a 20V drain-source voltage rating and a continuous drain current capability of 1.2A. This component, housed in a compact 6-DSBGA (1x1.5) package, features a low on-resistance of 100mOhm at 1A and 4.5V Vgs, along with a logic level gate for enhanced compatibility. Designed for efficient power management, it offers a maximum power dissipation of 800mW and a gate charge of 2.1nC at 4.5V. The CSD75301W1015 is suitable for a range of applications including battery management, power sequencing, and portable electronics. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-DSBGA (1x1.5) |
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