CSD75211W1723
MOSFET 2P-CH 20V 4.5A 12DSBGAManufacturer: Texas Instruments
Categories: FET, MOSFET Arrays
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Texas Instruments NexFET™ CSD75211W1723 is a 20V, 2 P-channel MOSFET array in a 12-DSBGA package. This device boasts a continuous drain current (Id) of 4.5A at 25°C and a low on-resistance (Rds On) of 40mOhm maximum at 2A, 4.5V. Featuring logic level gate drive, it offers a gate charge (Qg) of 5.9nC maximum at 4.5V and input capacitance (Ciss) of 600pF maximum at 10V. The MOSFET array operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.5W. Its compact 12-UFBGA, DSBGA package is suitable for surface mounting. This component is widely utilized in power management applications, including battery-powered devices and portable electronics.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 12-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 12-DSBGA |
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