CSD75205W1015
MOSFET 2P-CH 20V 1.2A 6DSBGAManufacturer: Texas Instruments
Categories: FET, MOSFET Arrays
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Texas Instruments NexFET™ CSD75205W1015 is a dual P-channel MOSFET array packaged in a compact 6-DSBGA (1x1.5) for space-constrained applications. This device features a 20V drain-source voltage rating and a continuous drain current capability of 1.2A per channel at 25°C. The low on-resistance of 120mOhm at 1A, 4.5V, coupled with logic-level gate drive, makes it suitable for power management solutions in portable electronics and battery-powered devices. With a maximum power dissipation of 750mW and a wide operating temperature range of -55°C to 150°C, it offers robust performance. The 6-UFBGA, DSBGA package is ideal for high-density surface mount assembly.
Additional Information
Series: NexFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 750mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 265pF @ 10V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Supplier Device Package | 6-DSBGA (1x1.5) |
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