TMX4C1029-12N
Nibble Mode DRAM, 1MX1, 120ns, CMOS, PDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TMX4C1029-12N is a 1M x 1 bit Nibble Mode DRAM. This CMOS component features a maximum access time of 120ns and operates asynchronously. It is housed in an 18-lead PDIP package (R-PDIP-T18) with a terminal pitch of 2.54mm, suitable for through-hole mounting. The TMX4C1029 series memory IC supports nibble mode access, enhancing read performance. Typical applications include memory systems in industrial automation and consumer electronics. Operating supply voltage ranges from 4.5V to 5.5V.
Additional Information
Series: TMX4C1029RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.4800 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Mode | NIBBLE |
| Access_Time_Max | 120.0000000000000000 |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | NIBBLE MODE DRAM |
| Memory_Organization | 1MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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