TMX4C1027-10DJ
Static Column DRAM, 1MX1, 100ns, CMOS, PDSO20Manufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments TMX4C1027-10DJ is a 1M x 1 bit Static Column DRAM, offering 1048576 words of memory. This component utilizes CMOS technology for efficient operation with a nominal supply voltage of 5V, ranging from 4.5V to 5.5V. The maximum access time is rated at 100ns, with an asynchronous operating mode. The memory organization is 1M x 1, featuring static column access for enhanced performance in specific memory access patterns. This device is packaged in a 20-terminal, rectangular SOJ (Small Outline J-Bend) package with a pitch of 1.27mm, suitable for surface mounting. The TMX4C1027 series DRAMs are commonly found in applications requiring high-speed data access and a compact footprint, such as in industrial automation and embedded systems.
Additional Information
Series: TMX4C1027RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 17.1450 |
| Width | 7.5700 |
| Technology | CMOS |
| Access_Mode | STATIC COLUMN |
| Access_Time_Max | 100.0000000000000000 |
| JESD_30_Code | R-PDSO-J20 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | STATIC COLUMN DRAM |
| Memory_Organization | 1MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 3.7600 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
TMX4C1027-10N
Static Column DRAM, 1MX1, 100ns, CMOS, PDIP18
TMX4C1027-12N
Static Column DRAM, 1MX1, 120ns, CMOS, PDIP18
TMX4C1027-15N
Static Column DRAM, 1MX1, 150ns, CMOS, PDIP18