TMX4C1026-15N
Nibble Mode DRAM, 1MX1, 150ns, CMOS, PDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMX4C1026 series NIBBLE MODE DRAM, part number TMX4C1026-15N, offers a 1M x 1 memory organization with a maximum access time of 150ns. This CMOS component operates asynchronously with 3-state outputs and is housed in an 18-lead PDIP package (R-PDIP-T18). Featuring nibble mode access, it is designed for applications requiring efficient data retrieval. This component finds utility in industrial control systems, consumer electronics, and embedded computing platforms where reliable memory solutions are essential. The TMX4C1026-15N supports a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. Its through-hole mounting and dual in-line package style facilitate straightforward board integration.
Additional Information
Series: TMX4C1026RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.4800 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Mode | NIBBLE |
| Access_Time_Max | 150.0000000000000000 |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | NIBBLE MODE DRAM |
| Memory_Organization | 1MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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