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TMX4C1025-12N

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TMX4C1025-12N

Nibble Mode DRAM, 1MX1, 120ns, CMOS, PDIP18

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMX4C1025-12N is a 1M x 1 bit Nibble Mode DRAM, featuring CMOS technology and an asynchronous operating mode. This component offers a maximum access time of 120ns and a data organization of 1M words by 1 bit. It operates with a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. The TMX4C1025-12N is housed in an 18-lead PDIP (Plastic Dual In-line Package) with a terminal pitch of 2.54mm, designed for through-hole mounting. This memory IC is suitable for applications requiring fast data access in areas such as industrial control and legacy system upgrades. The TMX4C1025 series supports Nibble Mode for enhanced read performance.

Additional Information

Series: TMX4C1025RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.4800
Width7.6200
TechnologyCMOS
Access_ModeNIBBLE
Access_Time_Max120.0000000000000000
JESD_30_CodeR-PDIP-T18
Memory_Density1048576.0000000000000000
Memory_IC_TypeNIBBLE MODE DRAM
Memory_Organization1MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles512
Seated_Height_Max5.0800
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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