TMX4C1024-10N
Fast Page DRAM, 1MX1, 100ns, CMOS, PDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMX4C1024-10N is a 1 Megabit (1M x 1) CMOS Fast Page DRAM featuring a 100ns maximum access time. This component operates asynchronously with a 5V nominal supply voltage (4.5V to 5.5V range). The TMX4C1024 series memory IC utilizes Fast Page mode for enhanced data transfer efficiency. It is housed in an 18-lead Plastic Dual In-line Package (PDIP) with through-hole mounting and a 2.54mm terminal pitch. The output characteristics are 3-State, and it requires 512 refresh cycles. This device finds application in various systems requiring high-speed memory solutions, including computing, networking, and industrial control equipment.
Additional Information
Series: TMX4C1024RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.4800 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 100.0000000000000000 |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 1MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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