TMX44C259-12N
Nibble Mode DRAM, 256KX4, 120ns, CMOS, PDIP20Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMX44C259 Series NIBBLE MODE DRAM, part number TMX44C259-12N, offers a 1Mbit (256K x 4) memory organization. This CMOS component features a maximum access time of 120ns and operates asynchronously with 3-state outputs. The TMX44C259-12N is housed in a 20-pin PDIP (Plastic Dual In-line Package) with through-hole mounting and a standard 2.54mm terminal pitch. It requires a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. This DRAM is suitable for applications requiring fast page mode access, commonly found in industrial control, telecommunications equipment, and legacy computing systems. The component supports 512 refresh cycles.
Additional Information
Series: TMX44C259RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 24.3250 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Mode | NIBBLE |
| Access_Time_Max | 120.0000000000000000 |
| JESD_30_Code | R-PDIP-T20 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | NIBBLE MODE DRAM |
| Memory_Organization | 256KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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