TMX44C259-10N
Nibble Mode DRAM, 256KX4, 100ns, CMOS, PDIP20Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TMX44C259-10N is a 256K x 4-bit Nibble Mode DRAM, operating asynchronously with a maximum access time of 100ns. This CMOS component features a 20-pin PDIP package (JESD30 code: R-PDIP-T20) with through-hole mounting and a terminal pitch of 2.54mm. The memory organization is 256K words by 4 bits. It supports 512 refresh cycles and operates within a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. This device finds application in systems requiring high-speed data buffering and memory expansion, including consumer electronics and industrial control systems. Its 3-state output characteristics facilitate bus interfacing.
Additional Information
Series: TMX44C259RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 24.3250 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Mode | NIBBLE |
| Access_Time_Max | 100.0000000000000000 |
| JESD_30_Code | R-PDIP-T20 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | NIBBLE MODE DRAM |
| Memory_Organization | 256KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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