TMX44C257-12N
Static Column DRAM, 256KX4, 120ns, CMOS, PDIP20Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMX44C257-12N is a Static Column DRAM with a memory organization of 256K x 4 bits, providing a total density of 1Mbit. This CMOS component features a maximum access time of 120ns and operates asynchronously. The TMX44C257 series utilizes Static Column access mode for enhanced performance. Housed in a 20-pin PDIP (Plastic Dual In-line Package) with through-hole mounting, it offers a supply voltage range of 4.5V to 5.5V. This device is suitable for applications in consumer electronics and industrial automation where reliable memory solutions are critical. Refresh cycles are managed via 512 cycles.
Additional Information
Series: TMX44C257RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | CMOS |
| Length | 24.3250 |
| Access_Mode | STATIC COLUMN |
| Access_Time_Max | 120.0000000000000000 |
| JESD_30_Code | R-PDIP-T20 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | STATIC COLUMN DRAM |
| Memory_Organization | 256KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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