TMX44C256-12N
Fast Page DRAM, 256KX4, 120ns, CMOS, PDIP20Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TMX44C256 is a Fast Page DRAM with a memory organization of 256K x 4 bits, providing a total density of 1 Mbit. This component features a maximum access time of 120ns and operates in CMOS technology. The TMX44C256 series utilizes an asynchronous operating mode with 3-state output characteristics. It requires a supply voltage range of 4.5V to 5.5V, with a nominal value of 5V. The component is housed in a 20-lead PDIP (Plastic Dual In-line Package) with through-hole mounting. This memory device is suitable for applications requiring cost-effective, high-speed data storage, commonly found in industrial control systems and legacy computing platforms.
Additional Information
Series: TMX44C256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 24.3250 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 120.0000000000000000 |
| JESD_30_Code | R-PDIP-T20 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 256KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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