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TMS664814-12DGE

Cache DRAM, 8MX8, 8ns, CMOS, PDSO54

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS664814-12DGE is a high-performance Cache DRAM component from the TMS664814 series. This device offers an 8Mx8 memory organization, providing a total memory density of 67,108,864 bits (64 Megabits). It features a fast 8ns maximum access time and operates with synchronous modes, supporting a four-bank page burst access mode for enhanced data throughput. The component is built using advanced CMOS technology and is housed in a 54-terminal, small outline, thin profile (TSOP2) package with a 0.80mm terminal pitch. Operating within a supply voltage range of 3.0V to 3.6V, and an operating temperature range of 0°C to 70°C, this surface-mount device is suitable for applications in computing, networking, and high-speed data processing systems. Its design emphasizes efficient data buffering and rapid retrieval for demanding processing environments.

Additional Information

Series: TMS664814RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.2200
Width10.1600
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max8.0000000000000000
JESD_30_CodeR-PDSO-G54
Memory_Density67108864.0000000000000000
Memory_IC_TypeCACHE DRAM
Memory_Organization8MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports2
Number_of_Terminals54
Number_of_Words8388608.0000000000000000
Number_of_Words_Code8M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Seated_Height_Max1.2000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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