TMS664414-10DGE
Synchronous DRAM, 16MX4, 7.5ns, MOS, PDSO54Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TMS664414-10DGE is a 64Mbit Synchronous DRAM with a 16Mx4 memory organization, offering a 7.5ns access time. This MOS technology component features a four-bank page burst access mode, supporting RAS-only, auto, and self-refresh functionalities. It operates within a temperature range of 0°C to 70°C and requires a supply voltage between 3.0V and 3.6V, with a nominal value of 3.3V. The device is housed in a 54-terminal TSOP II (Thin Small Outline Package) with gull wing terminals, suitable for surface mounting. Applications for this memory component are found in consumer electronics and industrial systems.
Additional Information
Series: TMS664414RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.2200 |
| Width | 10.1600 |
| Technology | MOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 7.5000000000000000 |
| Additional_Feature | RAS ONLY/AUTO/SELF REFRESH |
| JESD_30_Code | R-PDSO-G54 |
| Memory_Density | 67108864.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 16MX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 54 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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