TMS664164-12DGE
Cache DRAM, 4MX16, 8ns, CMOS, PDSO54Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS664164 series Cache DRAM, part number TMS664164-12DGE, offers a 4M x 16 memory organization with a maximum access time of 8ns. This synchronous CMOS device operates with a supply voltage range of 3.0V to 3.6V, typically 3.3V. The component features a four-bank page burst access mode and is housed in a 54-terminal TSOP2 package (JESD-30 Code: R-PDSO-G54). Its compact dimensions, with a seated height of 1.2mm and a terminal pitch of 0.8mm, make it suitable for space-constrained applications. This DRAM is commonly utilized in high-performance computing, networking infrastructure, and consumer electronics systems requiring fast data buffering. The operating temperature range is 0°C to 70°C.
Additional Information
Series: TMS664164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.2200 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 8.0000000000000000 |
| JESD_30_Code | R-PDSO-G54 |
| Memory_Density | 67108864.0000000000000000 |
| Memory_IC_Type | CACHE DRAM |
| Memory_Organization | 4MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 2 |
| Number_of_Terminals | 54 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Seated_Height_Max | 1.2000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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