TMS626812ADGE-10
Synchronous DRAM, 1MX8, 7ns, CMOS, PDSO44Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TMS626812ADGE-10 is a high-performance Synchronous DRAM component with a 1MX8 memory organization. Featuring a maximum access time of 7ns, this CMOS device operates within a 3.0V to 3.6V supply voltage range. The TMS626812 series is designed for dual bank page burst operation, supporting auto and self-refresh functionalities. This component is housed in a 44-lead TSOP2 package (JESD-30 Code R-PDSO-G44) with a 0.8mm terminal pitch, suitable for surface mounting in applications demanding efficient memory solutions. Its robust design finds utility across various industries, including consumer electronics and industrial automation.
Additional Information
Series: TMS626812RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 18.4100 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 7.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PDSO-G44 |
| Memory_Density | 8388608.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 1MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 44 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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