TMS626412B-12DGE
Synchronous DRAM, 4MX4, 8ns, MOS, PDSO44Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS626412B-12DGE is a 16Mbit synchronous DRAM with a 4M x 4 memory organization. This component operates at an 8ns access time, supporting Dual Bank Page Burst access modes. It features Auto/Self Refresh capabilities and is constructed using MOS technology. The device is housed in a 44-lead PDSO (TSOP2) package with a thin profile, suitable for surface mounting. This DRAM is designed for demanding applications in telecommunications, consumer electronics, and industrial automation where high-speed data buffering and memory density are critical. The operating voltage range is 3.0V to 3.6V, with a nominal supply of 3.3V. The operating temperature range is 0°C to 70°C.
Additional Information
Series: TMS626412RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 18.4100 |
| Width | 10.1600 |
| Technology | MOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 8.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PDSO-G44 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 4MX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 44 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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