TMS626412A-10DGE
Synchronous DRAM, 4MX4, 7.5ns, MOS, PDSO44Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS626412A-10DGE is a 16Mbit Synchronous DRAM from the TMS626412 series. This component features a 4M x 4 memory organization, offering a memory width of 4 bits. It operates with a maximum access time of 7.5ns and supports Dual Bank Page Burst access modes. The device is manufactured using MOS technology and is housed in a 44-lead TSOP2 (R-PDSO-G44) package with a 0.8mm terminal pitch. Key functionalities include auto and self-refresh capabilities. This DRAM is suitable for applications requiring high-speed data access, commonly found in consumer electronics, telecommunications, and industrial control systems. The operating temperature range is 0°C to 70°C with a nominal supply voltage of 3.3V (3.0V - 3.6V).
Additional Information
Series: TMS626412RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 18.4100 |
| Width | 10.1600 |
| Technology | MOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 7.5000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PDSO-G44 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 4MX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 44 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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