TMS626412-10BDGE
Synchronous DRAM, 4MX4, 6ns, CMOS, PDSO44Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS626412-10BDGE is a 16Mbit Synchronous DRAM (SDRAM) organized as 4M words by 4 bits. This component operates with a 3.3V supply voltage and features a maximum clock frequency of 100MHz, offering an access time of 6ns. The device supports burst lengths of 1, 2, 4, and 8 for both sequential and interleaved modes. It is housed in a 44-pin TSOP package with a 0.80mm terminal pitch, suitable for surface mounting. Applications for this SDRAM can be found in consumer electronics and industrial automation systems requiring high-speed memory solutions. The operating temperature range is from 0°C to 70°C.
Additional Information
Series: TMS626412RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 6.0000000000000000 |
| Clock_Frequency_Max | 100.00000 |
| I_O_Type | COMMON |
| Interleaved_Burst_Length | 1,2,4,8 |
| JESD_30_Code | R-PDSO-G44 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 4MX4 |
| Memory_Width | 4 |
| Number_of_Terminals | 44 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP |
| Package_Equivalence_Code | TSOP44,.46,32 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Refresh_Cycles | 4096 |
| Sequential_Burst_Length | 1,2,4,8 |
| Standby_Current_Max | 0.002000000000000 |
| Supply_Current_Max | 120.000000000000000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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