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TMS626412-10ABDGE

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TMS626412-10ABDGE

Synchronous DRAM, 4MX4, 6ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS626412-10ABDGE is a 16Mbit Synchronous DRAM with a 4M x 4 memory organization. This CMOS device operates with a 3.3V supply voltage and features a maximum clock frequency of 100MHz, providing a 6ns access time. The TMS626412 series supports interleaved and sequential burst lengths of 1, 2, 4, and 8. It is housed in a 44-terminal TSOP (Thin Small Outline Package) with a 0.800mm terminal pitch, designed for surface mounting. Typical applications include consumer electronics and telecommunications equipment. The component offers 4096 refresh cycles and a standby current of 2mA, with a maximum supply current of 120mA. Its operating temperature range is from 0°C to 70°C.

Additional Information

Series: TMS626412RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max6.0000000000000000
Clock_Frequency_Max100.00000
I_O_TypeCOMMON
Interleaved_Burst_Length1,2,4,8
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Terminals44
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP
Package_Equivalence_CodeTSOP44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Sequential_Burst_Length1,2,4,8
Standby_Current_Max0.002000000000000
Supply_Current_Max120.000000000000000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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