TMS626402-10DGE
Synchronous DRAM, 4MX4, CMOS, PDSO44Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS626402-10DGE is a 16 Megabit Synchronous DRAM organized as 4M words by 4 bits. This CMOS component utilizes a DUAL BANK PAGE BURST access mode and operates synchronously. It features CAS BEFORE RAS/SELF REFRESH functionality, and supports self-refresh. The device operates within a 3.0V to 3.6V supply voltage range with a nominal voltage of 3.3V, and has an operating temperature range of 0°C to 70°C. Packaged in a 44-terminal TSOP2 (R-PDSO-G44) with a 0.8mm pitch, it is suitable for surface-mount applications. This DRAM is commonly found in consumer electronics and industrial automation systems.
Additional Information
Series: TMS626402RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 18.4100 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Additional_Feature | CAS BEFORE RAS/SELF REFRESH |
| JESD_30_Code | R-PDSO-G44 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 4MX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 44 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Refresh_Cycles | 4096 |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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