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TMS626162A-12DGE

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TMS626162A-12DGE

Synchronous DRAM, 1MX16, 8ns, MOS, PDSO54

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS626162A-12DGE is a 16Mbit Synchronous DRAM, organized as 1M words by 16 bits. This MOS technology component offers an 8ns access time and operates with a clock frequency up to 83MHz. It supports dual bank page burst access modes with interleaved burst lengths of 1, 2, 4, and 8, and sequential burst lengths up to FP. Features include auto/self refresh cycles of 4096. The device is housed in a 54-lead TSOP II package (R-PDSO-G54) with a terminal pitch of 0.80mm. Operating voltage ranges from 3.0V to 3.6V, with a nominal 3.3V supply. This component is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: TMS626162RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.2200
Width10.1600
TechnologyMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max8.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
Clock_Frequency_Max83.00000
I_O_TypeCOMMON
Interleaved_Burst_Length1,2,4,8
JESD_30_CodeR-PDSO-G54
Memory_Density16777216.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals54
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshYes
Sequential_Burst_Length1,2,4,8,FP
Standby_Current_Max0.002000000000000
Supply_Current_Max135.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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