TMS4C1025N-15
Nibble Mode DRAM, 1MX1, 150ns, CMOS, PDIP18Manufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments TMS4C1025N-15 is a 1M x 1 Nibble Mode DRAM. This CMOS memory component features a 150ns maximum access time and operates with a nominal 5V supply. The memory organization is 1M words by 1 bit, providing a total density of 1048576 bits. Designed with separate I/O, it supports 3-state output characteristics. Packaged in an 18-lead PDIP (Plastic Dual In-line Package) with a terminal pitch of 2.54mm, this through-hole device is suitable for applications requiring efficient data access and refresh cycles (512). Its operational temperature range is 0°C to 70°C. This component finds application in various electronic systems, including industrial automation and consumer electronics.
Additional Information
Series: TMS4C1025RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 150.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | NIBBLE MODE DRAM |
| Memory_Organization | 1MX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
TMS4C1025-10NL
Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18
TMS4C1025-12NL
Nibble Mode DRAM, 1MX1, 120ns, CMOS, PDIP18
TMS4C1025-15NL
Nibble Mode DRAM, 1MX1, 150ns, CMOS, PDIP18