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TMS4C1025-80SD

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TMS4C1025-80SD

Nibble Mode DRAM, 1MX1, 80ns, CMOS, PZIP20

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS4C1025-80SD is a 1M x 1 bit CMOS Nibble Mode DRAM with an 80ns maximum access time. This component utilizes separate I/O and supports RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes, along with 512 refresh cycles. Operating within a 4.5V to 5.5V supply voltage range, it features asynchronous operation and 3-state outputs. The TMS4C1025 series DRAM is housed in a 20-pin Plastic ZIP (PZIP20) package suitable for through-hole mounting. This memory IC finds application in embedded systems and industrial automation where reliable, high-speed data storage is critical. Its design facilitates efficient data burst transfers, contributing to improved system performance in demanding environments.

Additional Information

Series: TMS4C1025RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width2.8000
TechnologyCMOS
Access_ModeNIBBLE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-PZIP-T20
Memory_Density1048576.0000000000000000
Memory_IC_TypeNIBBLE MODE DRAM
Memory_Organization1MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeZIP
Package_Equivalence_CodeZIP20,.1
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles512
Seated_Height_Max10.1600
Standby_Current_Max0.002000000000000
Supply_Current_Max75.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch1.270
Terminal_PositionZIG-ZAG

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