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TMS4C1025-12SD

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TMS4C1025-12SD

Nibble Mode DRAM, 1MX1, 120ns, CMOS, PZIP20

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments TMS4C1025-12SD is a 1Mx1 Nibble Mode DRAM, engineered with CMOS technology. This component offers an access time of 120ns and supports NIBBLE, RAS ONLY/CAS BEFORE RAS, and HIDDEN REFRESH operating modes. It features separate I/O and 3-state output characteristics, operating from a 4.5V to 5.5V supply. The device is housed in a 20-pin PZIP (Plastic Zip) package with through-hole mounting. This DRAM is suitable for applications in industrial and consumer electronics requiring reliable memory solutions. The TMS4C1025 series is known for its efficient data access patterns.

Additional Information

Series: TMS4C1025RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width2.8000
TechnologyCMOS
Access_ModeNIBBLE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-PZIP-T20
Memory_Density1048576.0000000000000000
Memory_IC_TypeNIBBLE MODE DRAM
Memory_Organization1MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeZIP
Package_Equivalence_CodeZIP20,.1
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles512
Seated_Height_Max10.1600
Standby_Current_Max0.002000000000000
Supply_Current_Max55.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch1.270
Terminal_PositionZIG-ZAG

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