TMS4C1025-12NL
Nibble Mode DRAM, 1MX1, 120ns, CMOS, PDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4C1025-12NL is a 1M x 1 bit Nibble Mode DRAM, offering a 120ns access time and CMOS technology. This component features RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes for efficient memory management. Designed with a PDIP18 package, it supports a 5V supply voltage range and operates between 0°C and 70°C. The 18-lead plastic dual in-line package has a 2.54mm terminal pitch. This DRAM is suitable for applications in consumer electronics and industrial control systems where reliable asynchronous memory is required.
Additional Information
Series: TMS4C1025RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.4800 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Mode | NIBBLE |
| Access_Time_Max | 120.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | NIBBLE MODE DRAM |
| Memory_Organization | 1MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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