TMS4C1025-10NL
Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4C1025-10NL is a 1M x 1 bit CMOS dynamic random-access memory (DRAM) component. This device operates in Nibble Mode, offering an access time of 100 ns and supporting refresh cycles of 512. The TMS4C1025 series provides asynchronous operation with a nominal supply voltage of 5V (4.5V to 5.5V). Features include RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH capabilities, along with 3-state output characteristics. This through-hole component is housed in an 18-lead PDIP package with a 2.54mm terminal pitch. Applications for this technology can be found in various industrial and consumer electronics systems requiring reliable memory solutions.
Additional Information
Series: TMS4C1025RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.4800 |
| Width | 7.6200 |
| Technology | CMOS |
| Access_Mode | NIBBLE |
| Access_Time_Max | 100.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | NIBBLE MODE DRAM |
| Memory_Organization | 1MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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