TMS4C1024-70N
Fast Page DRAM, 1MX1, 70ns, CMOS, PDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4C1024-70N is a 1 Megabit (1Mx1) Fast Page Mode Dynamic Random Access Memory (DRAM) component. This CMOS device features a maximum access time of 70 nanoseconds and operates with a nominal supply voltage of 5V. The memory organization is 1M words by 1 bit, utilizing 512 refresh cycles. It is housed in an 18-lead Plastic Dual In-line Package (PDIP) with through-hole mounting. The TMS4C1024 series is suitable for applications requiring high-speed memory access, including consumer electronics, industrial controls, and telecommunications infrastructure. The component offers 3-state output characteristics and operates within a temperature range of 0°C to 70°C.
Additional Information
Series: TMS4C1024RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 70.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T18 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 1MX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Standby_Current_Max | 0.002000000000000 |
| Supply_Current_Max | 80.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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