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TMS465169P-60DGE

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TMS465169P-60DGE

EDO DRAM, 4MX16, 60ns, MOS, PDSO50

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS465169P-60DGE is a 67,108,864-bit EDO DRAM with a memory organization of 4M x 16 bits. This component offers an access time of 60ns and operates with a 3.3V supply voltage. It supports Fast Page Mode with EDO capabilities, along with RAS-only, CAS-before-RAS, and hidden refresh modes. The TMS465169 series features self-refresh functionality and is housed in a 50-pin TSOP II package (R-PDSO-G50). This memory solution is suitable for applications in computing, networking, and consumer electronics where high-speed data access and efficient refreshing are critical. The device operates within a temperature range of 0°C to 70°C.

Additional Information

Series: TMS465169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G50
Memory_Density67108864.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization4MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals50
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000150000000000
Supply_Current_Max110.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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