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TMS465169-60DGE

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TMS465169-60DGE

EDO DRAM, 4MX16, 60ns, MOS, PDSO50

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS465169-60DGE is a 67,108,864-bit EDO DRAM organized as 4M words by 16 bits. This component features an access time of 60ns and utilizes MOS technology. Designed for asynchronous operation, it supports FAST PAGE WITH EDO access modes and incorporates RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH functionalities. The device operates within a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V. It is housed in a 50-lead R-PDSO-G50 (TSOP2) package with a terminal pitch of 0.80mm. This memory component is suitable for applications in computing, networking, and industrial automation.

Additional Information

Series: TMS465169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G50
Memory_Density67108864.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization4MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals50
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshNo
Standby_Current_Max0.000500000000000
Supply_Current_Max110.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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