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TMS464800-60DZ

Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS464800 series Fast Page DRAM, part number TMS464800-60DZ, offers a robust 67,108,864-bit (64Mbit) memory density organized as 8M words by 8 bits. This CMOS component features a maximum access time of 60ns, supporting Fast Page mode for efficient data transfer. Its asynchronous operating mode and RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH capabilities provide flexible control. The device is housed in a 32-lead SOJ (Small Outline J-Lead) package with a J-bend terminal form, suitable for surface mounting. Operating within a temperature range of 0°C to 70°C and a supply voltage of 3.0V to 3.6V (nominal 3.3V), this DRAM is commonly found in applications requiring high-speed data buffering and storage, such as embedded systems, networking equipment, and consumer electronics.

Additional Information

Series: TMS464800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9550
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-PDSO-J32
Memory_Density67108864.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization8MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals32
Number_of_Words8388608.0000000000000000
Number_of_Words_Code8M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles8192
Seated_Height_Max3.7600
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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