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TMS464409P-60DGC

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TMS464409P-60DGC

EDO DRAM, 16MX4, 60ns, MOS, PDSO32

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS464409 Series EDO DRAM, part number TMS464409P-60DGC, offers 67,108,864 bits of memory capacity, organized as 16M words by 4 bits. This MOS technology device features a maximum access time of 60ns and utilizes FAST PAGE WITH EDO access mode. Key operational features include RAS ONLY/CAS BEFORE RAS, HIDDEN, and SELF REFRESH modes, along with 8192 refresh cycles. The component supports a supply voltage range of 3.0V to 3.6V, with a nominal 3.3V. It is housed in a 32-terminal PDSO package (JESD-30 Code R-PDSO-G32) with a terminal pitch of 1.27mm. This EDO DRAM is suitable for applications in consumer electronics and industrial automation.

Additional Information

Series: TMS464409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G32
Memory_Density67108864.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization16MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals32
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP32,.46
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles8192
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000150000000000
Supply_Current_Max110.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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