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TMS464169P-40DGE

EDO DRAM, 4MX16, 40ns, MOS, PDSO50

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS464169 series EDO DRAM, part number TMS464169P-40DGE, offers 64Mbit density with a 4M x 16 organization. This MOS technology component features a maximum access time of 40ns and supports Fast Page with EDO access modes, alongside RAS Only, CAS Before RAS, and Hidden refresh functions. It operates asynchronously with a supply voltage range of 3.0V to 3.6V and a nominal voltage of 3.3V, suitable for industrial and consumer electronics applications. The device includes self-refresh capability and is housed in a 50-pin TSOP II (R-PDSO-G50) package with a 0.80mm terminal pitch. This component is designed for high-performance memory subsystems where EDO technology offers an advantage.

Additional Information

Series: TMS464169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max40.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G50
Memory_Density67108864.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization4MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals50
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles8192
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000150000000000
Supply_Current_Max140.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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