TMS464160P-60DZ
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO32Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS464160P-60DZ is a 67,108,864-bit Fast Page Mode DRAM with a memory organization of 4M x 16. This CMOS component offers a maximum access time of 60 ns and operates asynchronously. Key features include RAS ONLY, CAS BEFORE RAS, HIDDEN, and SELF REFRESH modes, along with 8192 refresh cycles. The device supports a supply voltage range of 3.0V to 3.6V with a nominal voltage of 3.3V. Packaged in a 32-terminal SOJ (Small Outline J-Leaded) package with a terminal pitch of 1.270 mm, it is suitable for surface mounting. Applications for this memory device span consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: TMS464160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 10.1600 |
| Technology | CMOS |
| Length | 20.9550 |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 60.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
| JESD_30_Code | R-PDSO-J32 |
| Memory_Density | 67108864.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 8192 |
| Seated_Height_Max | 3.7600 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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