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TMS464160-60DZ

Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO32

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS464160 series Fast Page DRAM, part number TMS464160-60DZ, offers a 67,108,864 bit memory density organized as 4M words by 16 bits. This component features a maximum access time of 60ns and operates using CMOS technology. The TMS464160-60DZ supports Fast Page mode access, along with RAS-only, CAS-before-RAS, and hidden refresh operations. It is housed in a 32-terminal SOJ (Small Outline J-Lead) package with a terminal pitch of 1.270mm, suitable for surface mounting. The device operates with a supply voltage range of 3.0V to 3.6V and has an operating temperature range of 0°C to 70°C. This memory component is utilized in applications requiring high-speed data access and storage, common in industrial control systems and telecommunications equipment.

Additional Information

Series: TMS464160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width10.1600
TechnologyCMOS
Length20.9550
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-PDSO-J32
Memory_Density67108864.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals32
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles8192
Seated_Height_Max3.7600
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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