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TMS46400P-10DGB

Fast Page DRAM, 1MX4, 100ns, CMOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS46400P-10DGB is a 4Mbit Fast Page DRAM with a 1M x 4 memory organization. This CMOS component features a maximum access time of 100ns and operates asynchronously. Key functionalities include RAS ONLY, CAS BEFORE RAS, HIDDEN, and SELF REFRESH modes, supported by 1024 refresh cycles. The device is housed in a 20-lead PDSO package (TSOP2-R) with a terminal pitch of 1.27mm, designed for surface mounting. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 3.0V and 3.6V, with a nominal voltage of 3.3V. This memory IC finds application in industrial control systems and consumer electronics where its speed and density are advantageous.

Additional Information

Series: TMS46400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH
JESD_30_CodeR-PDSO-G20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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