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TMS46100P-10SD

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TMS46100P-10SD

Fast Page DRAM, 4MX1, 100ns, CMOS, PZIP20

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS46100 is a 4M x 1 bit Fast Page Mode DRAM, offering a 100ns maximum access time. This CMOS component, designated TMS46100P-10SD, operates with a supply voltage range of 3.0V to 3.6V and supports features such as RAS-only, CAS-before-RAS, Hidden, and Self Refresh modes. It is packaged in a 20-pin PZIP (Plastic ZIP) with through-hole mounting. Key operational characteristics include 1024 refresh cycles and an asynchronous operating mode. Applications for this memory device span industrial control systems and data acquisition equipment.

Additional Information

Series: TMS46100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width2.8000
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH
JESD_30_CodeR-PZIP-T20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeZIP
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles1024
Seated_Height_Max10.1600
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch1.270
Terminal_PositionZIG-ZAG

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