TMS46100-70SD
Fast Page DRAM, 4MX1, 70ns, CMOS, PZIP20Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TMS46100-70SD is a 4M x 1 Fast Page DRAM component. It features a 70ns maximum access time and operates using CMOS technology. This device supports Fast Page mode, RAS-only refresh, and CAS-before-RAS refresh modes, including hidden refresh for enhanced efficiency. The memory organization is 4M words by 1 bit, providing a total density of 4,194,304 bits. It operates asynchronously with a supply voltage range of 3.0V to 3.6V, typically 3.3V. The component is housed in a 20-pin Plastic ZIP (PZIP) package with through-hole mounting. This DRAM is suitable for applications in consumer electronics and industrial control systems requiring high-speed memory access within a specific density.
Additional Information
Series: TMS46100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 2.8000 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 70.0000000000000000 |
| Additional_Feature | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
| JESD_30_Code | R-PZIP-T20 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | ZIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 1024 |
| Seated_Height_Max | 10.1600 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 1.270 |
| Terminal_Position | ZIG-ZAG |
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