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TMS46100-70DGB

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TMS46100-70DGB

Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS46100-70DGB is a 4M x 1 Fast Page DRAM, offering a 70ns access time. This CMOS component utilizes a 20-pin PDSO (Thin Small Outline Package) for surface mounting. Key features include RAS ONLY and CAS BEFORE RAS refresh modes, along with HIDDEN REFRESH capability. The memory organization is 4M words by 1 bit, with a total density of 4,194,304 bits. Operating within a 3.0V to 3.6V supply voltage range, this device is suitable for applications requiring efficient memory access in sectors such as industrial automation and consumer electronics. The package dimensions are 17.14mm in length and 7.62mm in width, with a terminal pitch of 1.27mm.

Additional Information

Series: TMS46100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
JESD_30_CodeR-PDSO-G20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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