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TMS46100-10DGB

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TMS46100-10DGB

Fast Page DRAM, 4MX1, 100ns, CMOS, PDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments TMS46100-10DGB is a 4M x 1 bit Fast Page Mode DRAM, offering a 100ns access time. This CMOS component utilizes a 20-lead PDSO package (TSOP2-R) with a 1.27mm pitch, suitable for surface mounting. Key operational features include RAS-only, CAS-before-RAS, and hidden refresh modes, alongside asynchronous operation. Designed for efficient memory access, it operates within a 3.0V to 3.6V supply voltage range and a 0°C to 70°C temperature range. Applications for this memory device can be found in industrial control systems and consumer electronics.

Additional Information

Series: TMS46100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
JESD_30_CodeR-PDSO-G20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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