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TMS45169-60DGE

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TMS45169-60DGE

EDO DRAM, 256KX16, 60ns, CMOS, PDSO40

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS45169 series EDO DRAM, part number TMS45169-60DGE. This 4Mbit memory device features a 256K x 16 organization, providing a total density of 4194304 bits. It operates with a maximum access time of 60 ns and utilizes CMOS technology for efficient performance. The component is housed in a 40-terminal, rectangular, plastic/epoxy TSOP package with a thin profile and gull wing terminals on a 0.800 mm pitch. Designed for surface mounting, it supports a common I/O type and 3-state output characteristics. The TMS45169-60DGE requires a nominal supply voltage of 5V and is suitable for applications operating within a temperature range of 0°C to 70°C. Refresh cycles are managed via 512 refresh cycles. This component finds application in various industrial and consumer electronics systems requiring high-speed data storage.

Additional Information

Series: TMS45169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max60.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G40
Memory_Density4194304.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization256KX16
Memory_Width16
Number_of_Terminals40
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP
Package_Equivalence_CodeTSOP40/44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles512
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max180.000000000000000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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