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TMS45165-10DGE

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TMS45165-10DGE

Fast Page DRAM, 256KX16, 100ns, CMOS, PDSO40

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS45165-10DGE is a 4Mbit Fast Page DRAM with a memory organization of 256K words by 16 bits, providing a 100ns maximum access time. This CMOS component features RAS-only, CAS-before-RAS, and hidden refresh modes, supporting 512 refresh cycles. It operates with a nominal supply voltage of 5V, ranging from 4.5V to 5.5V, and utilizes a common I/O type with 3-state output characteristics. The device is housed in a 40-pin TSOP2 package, a rectangular plastic/epoxy body with a thin profile and gull wing terminals on a 0.80mm pitch. This component is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: TMS45165RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width10.1600
TechnologyCMOS
Length18.4100
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G40
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals40
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP40/44,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles512
Seated_Height_Max1.2000
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max120.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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